The sample for EBIC testing must be a semiconductor material and contain an internal electric field for separating electron hole pairs
By measuring, we can obtain the position and width of the PN junction, determine the rectification characteristics through IV curve research, study the diffusion length of minority carriers, investigate the location of defects, and analyze the failure of electronic devices.

Example 1: Testing PN junction position, width, and minority carrier diffusion length

Example 2: Testing the dislocation density of semiconductor materials and quantitatively calculating screw dislocations in Si solar cell materials.